MOSFET Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in a D2PAK package
Products specifications
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 57 nC |
Vgs - Gate-Source Voltage | 25 V |
Channel Mode | Enhancement |
Qualification | AEC-Q101 |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 84 mOhms |
Pd - Power Dissipation | 250 W |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Configuration | Single |
Transistor Polarity | N-Channel |
Tradename | MDmesh |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 500 V |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 35 A |