MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
Products specifications
Qualification | AEC-Q101 |
Pd - Power Dissipation | 250 W |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 42 A |
Tradename | MDmesh |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Qg - Gate Charge | 100 nC |
Rds On - Drain-Source Resistance | 63 mOhms |
Vds - Drain-Source Breakdown Voltage | 650 V |
Channel Mode | Enhancement |
Configuration | Single |