STB42N60M2-EP

R 1.00

MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package

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MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package

Products specifications

Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	34 A
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	87 mOhms
Tradename	MDmesh
Pd - Power Dissipation	250 W
Transistor Polarity	N-Channel
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	55 nC
Vgs - Gate-Source Voltage	25 V
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	600 V

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Products specifications

Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	34 A
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	87 mOhms
Tradename	MDmesh
Pd - Power Dissipation	250 W
Transistor Polarity	N-Channel
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	55 nC
Vgs - Gate-Source Voltage	25 V
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	600 V