MOSFET N-channel 600 V, 0.078 Ohm typ 34 A MDmesh M2 Power MOSFET in D2PAK package
Products specifications
Rds On - Drain-Source Resistance | 88 mOhms |
Technology | Si |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 34 A |
Qg - Gate Charge | 57 nC |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Pd - Power Dissipation | 250 W |
Vgs - Gate-Source Voltage | 25 V |