MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package
Products specifications
Tradename | MDmesh |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |
Qualification | AEC-Q101 |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Pd - Power Dissipation | 210 W |
Configuration | Single |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 28 A |
Vgs - Gate-Source Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 110 mOhms |
Qg - Gate Charge | 54 nC |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |