MOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097
Products specifications
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 25 V |
Rds On - Drain-Source Resistance | 110 mOhms |
Qg - Gate Charge | 80.4 nC |
Number of Channels | 1 Channel |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 650 V |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 29 A |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 190 W |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Qualification | AEC-Q101 |
Vgs th - Gate-Source Threshold Voltage | 4 V |