MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS
Products specifications
Pd - Power Dissipation | 210 W |
Tradename | MDmesh |
Qg - Gate Charge | 83.6 nC |
Transistor Polarity | N-Channel |
Configuration | Single |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 105 mOhms |
Id - Continuous Drain Current | 29 A |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |
Qualification | AEC-Q101 |