MOSFET 60V 0.032Ohm 30A N-Channel
Products specifications
Transistor Polarity | N-Channel |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 40 mOhms |
Configuration | Single |
Vgs - Gate-Source Voltage | 18 V |
Channel Mode | Enhancement |
Qualification | AEC-Q101 |
Minimum Operating Temperature | - 55 C |
Packaging | Cut Tape, MouseReel, Reel |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 70 W |
Id - Continuous Drain Current | 30 A |
Maximum Operating Temperature | + 175 C |