STB36N60M6

R 1.00

MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a D2PAK package

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MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a D2PAK package

Products specifications

Number of Channels	1 Channel
Rds On - Drain-Source Resistance	85 mOhms
Transistor Polarity	N-Channel
Id - Continuous Drain Current	30 A
Vds - Drain-Source Breakdown Voltage	600 V
Tradename	MDmesh
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3.25 V
Qg - Gate Charge	44.3 nC
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	25 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Pd - Power Dissipation	208 W
Maximum Operating Temperature	+ 150 C

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Products specifications

Number of Channels	1 Channel
Rds On - Drain-Source Resistance	85 mOhms
Transistor Polarity	N-Channel
Id - Continuous Drain Current	30 A
Vds - Drain-Source Breakdown Voltage	600 V
Tradename	MDmesh
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3.25 V
Qg - Gate Charge	44.3 nC
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	25 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Pd - Power Dissipation	208 W
Maximum Operating Temperature	+ 150 C