STB35N60DM2

R 1.00

MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package

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MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package

Products specifications

Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Pd - Power Dissipation	210 W
Technology	Si
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	110 mOhms
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	28 A
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	54 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Pd - Power Dissipation	210 W
Technology	Si
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	110 mOhms
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	28 A
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	54 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel