STB34N50DM2AG

R 1.00

MOSFET Automotive-grade N-channel 500 V, 0.10 Ohm typ., 26 A MDmesh DM2 Power MOSFET in a D2PAK package

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MOSFET Automotive-grade N-channel 500 V, 0.10 Ohm typ., 26 A MDmesh DM2 Power MOSFET in a D2PAK package

Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	190 W
Id - Continuous Drain Current	26 A
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	500 V
Technology	Si
Configuration	Single
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Qualification	AEC-Q101
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	44 nC
Tradename	MDmesh
Rds On - Drain-Source Resistance	120 mOhms

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	190 W
Id - Continuous Drain Current	26 A
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	500 V
Technology	Si
Configuration	Single
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Qualification	AEC-Q101
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	44 nC
Tradename	MDmesh
Rds On - Drain-Source Resistance	120 mOhms