STB33N65M2

R 1.00

MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package

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MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package

Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Configuration	Single
Technology	Si
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	140 mOhms
Pd - Power Dissipation	190 W
Vds - Drain-Source Breakdown Voltage	650 V
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	24 A
Qg - Gate Charge	41.5 nC
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Configuration	Single
Technology	Si
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	140 mOhms
Pd - Power Dissipation	190 W
Vds - Drain-Source Breakdown Voltage	650 V
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	24 A
Qg - Gate Charge	41.5 nC
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel