STB33N60DM2

R 1.00

MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package

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MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package

Products specifications

Id - Continuous Drain Current	24 A
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Pd - Power Dissipation	190 W
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	130 mOhms
Qg - Gate Charge	43 nC
Technology	Si
Tradename	MDmesh

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Products specifications

Id - Continuous Drain Current	24 A
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Pd - Power Dissipation	190 W
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	130 mOhms
Qg - Gate Charge	43 nC
Technology	Si
Tradename	MDmesh