MOSFET POWER MOSFET N-CH 650V
Products specifications
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Qg - Gate Charge | 72 nC |
Id - Continuous Drain Current | 24 A |
Vgs - Gate-Source Voltage | 25 V |
Technology | Si |
Rds On - Drain-Source Resistance | 95 mOhms |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Pd - Power Dissipation | 150 W |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Number of Channels | 1 Channel |
Tradename | MDmesh |