STB28NM60ND

R 1.00

MOSFET Nchnl 600 V 0120 Ohm typ 24 A Pwr MOSFET

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MOSFET Nchnl 600 V 0120 Ohm typ 24 A Pwr MOSFET

Products specifications

Qg - Gate Charge	62.5 nC
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	150 mOhms
Id - Continuous Drain Current	23 A
Transistor Polarity	N-Channel
Packaging	Reel
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	25 V
Pd - Power Dissipation	190 W
Vds - Drain-Source Breakdown Voltage	650 V
Configuration	Single

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Products specifications

Qg - Gate Charge	62.5 nC
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	150 mOhms
Id - Continuous Drain Current	23 A
Transistor Polarity	N-Channel
Packaging	Reel
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	25 V
Pd - Power Dissipation	190 W
Vds - Drain-Source Breakdown Voltage	650 V
Configuration	Single