STB28N60M2

R 1.00

MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package

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MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package

Products specifications

Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	22 A
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Configuration	Single
Rds On - Drain-Source Resistance	150 mOhms
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Qg - Gate Charge	36 nC
Pd - Power Dissipation	170 W

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Products specifications

Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	22 A
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Configuration	Single
Rds On - Drain-Source Resistance	150 mOhms
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Qg - Gate Charge	36 nC
Pd - Power Dissipation	170 W