STB28N60DM2

R 1.00

MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package

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MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package

Products specifications

Transistor Polarity	N-Channel
Tradename	MDmesh
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	130 mOhms
Id - Continuous Drain Current	22 A
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	190 W
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	39 nC
Technology	Si

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Products specifications

Transistor Polarity	N-Channel
Tradename	MDmesh
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	130 mOhms
Id - Continuous Drain Current	22 A
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	190 W
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	39 nC
Technology	Si