MOSFET N-Ch Power Mosfet 600V STripFET D2PAK
Products specifications
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Vgs - Gate-Source Voltage | 25 V |
Qg - Gate Charge | 80 nC |
Channel Mode | Enhancement |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 130 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 160 W |
Id - Continuous Drain Current | 21 A |