MOSFET POWER MOSFET N-CH 600V
Products specifications
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 165 mOhms |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Tradename | MDmesh |
Qg - Gate Charge | 60 nC |
Id - Continuous Drain Current | 20 A |
Pd - Power Dissipation | 140 W |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |