STB25NF06AG

R 1.00

MOSFET Automotive-grade N-channel 60 V, 0.056 Ohm typ., 19 A STripFET II Power MOSFET in a D2PAK package

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MOSFET Automotive-grade N-channel 60 V, 0.056 Ohm typ., 19 A STripFET II Power MOSFET in a D2PAK package

Products specifications

Qg - Gate Charge	14.1 nC
Qualification	AEC-Q101
Pd - Power Dissipation	50 W
Technology	Si
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Tradename	STripFET
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	19 A
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	56 mOhms

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Products specifications

Qg - Gate Charge	14.1 nC
Qualification	AEC-Q101
Pd - Power Dissipation	50 W
Technology	Si
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Tradename	STripFET
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	19 A
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	56 mOhms