STB24N60DM2

R 1.00

MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package

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MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package

Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	200 mOhms
Pd - Power Dissipation	150 W
Id - Continuous Drain Current	18 A
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Qg - Gate Charge	29 nC
Vgs - Gate-Source Voltage	25 V
Tradename	FDmesh

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	200 mOhms
Pd - Power Dissipation	150 W
Id - Continuous Drain Current	18 A
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Qg - Gate Charge	29 nC
Vgs - Gate-Source Voltage	25 V
Tradename	FDmesh