MOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOS
Products specifications
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 19.5 A |
Configuration | Single |
Technology | Si |
Qg - Gate Charge | 69 nC |
Pd - Power Dissipation | 150 W |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 180 mOhms |