MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2
Products specifications
Qg - Gate Charge | 21.5 nC |
Pd - Power Dissipation | 110 W |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 255 mOhms |
Vgs - Gate-Source Voltage | 25 V |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Id - Continuous Drain Current | 13 A |
Technology | Si |