STB18N60DM2

R 1.00

MOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package

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MOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package

Products specifications

Pd - Power Dissipation	90 W
Vgs - Gate-Source Voltage	25 V
Tradename	MDmesh
Qg - Gate Charge	20 nC
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	260 mOhms
Packaging	Cut Tape, MouseReel, Reel
Channel Mode	Enhancement
Number of Channels	1 Channel
Technology	Si
Configuration	Single
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	12 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Pd - Power Dissipation	90 W
Vgs - Gate-Source Voltage	25 V
Tradename	MDmesh
Qg - Gate Charge	20 nC
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	260 mOhms
Packaging	Cut Tape, MouseReel, Reel
Channel Mode	Enhancement
Number of Channels	1 Channel
Technology	Si
Configuration	Single
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	12 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C