Vds - Drain-Source Breakdown Voltage | 900 V |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 15 A |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd - Power Dissipation | 190 W |
Qg - Gate Charge | 29.7 nC |
Rds On - Drain-Source Resistance | 0.33 Ohms |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 3 V |