STB10N95K5

R 1.00

MOSFET N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in D2PAK package

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MOSFET N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in D2PAK package

Products specifications

Rds On - Drain-Source Resistance	800 mOhms
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	8 A
Qg - Gate Charge	22 nC
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Tradename	SuperMESH
Technology	Si
Number of Channels	1 Channel
Configuration	Single
Pd - Power Dissipation	130 W
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	950 V
Vgs th - Gate-Source Threshold Voltage	4 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Rds On - Drain-Source Resistance	800 mOhms
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	8 A
Qg - Gate Charge	22 nC
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Tradename	SuperMESH
Technology	Si
Number of Channels	1 Channel
Configuration	Single
Pd - Power Dissipation	130 W
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	950 V
Vgs th - Gate-Source Threshold Voltage	4 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C