STB100N6F7

R 1.00

MOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package

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MOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package

Products specifications

Minimum Operating Temperature	- 55 C
Packaging	Tube
Configuration	Single
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	5.6 mOhms
Pd - Power Dissipation	125 W
Qg - Gate Charge	30 nC
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V
Technology	Si
Tradename	STripFET

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Products specifications

Minimum Operating Temperature	- 55 C
Packaging	Tube
Configuration	Single
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	5.6 mOhms
Pd - Power Dissipation	125 W
Qg - Gate Charge	30 nC
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V
Technology	Si
Tradename	STripFET