RF MOSFET Transistors RF PWR Trans N-Ch 50V 100MHz FET
Lead Time: 0 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 200 V |
Packaging | Bulk |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Gain | 24 dB |
Product Type | RF MOSFET Transistors |
Id - Continuous Drain Current | 40 A |
Output Power | 300 W |