RF MOSFET Transistors 350W 29dB 30MHz STAC N-Ch RF FET
Products specifications
Product Type | RF MOSFET Transistors |
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 250 V |
Minimum Operating Temperature | - 65 C |
Output Power | 350 W |
Gain | 29 dB |
Transistor Polarity | N-Channel |
Technology | Si |
Id - Continuous Drain Current | 20 A |