RF MOSFET Transistors N-Ch 900W 100V RF Mosfet in STAC pack
Products specifications
Product Type | RF MOSFET Transistors |
Gain | 24.6 dB |
Technology | Si |
Output Power | 580 W |
Packaging | Bulk |
Id - Continuous Drain Current | 20 A |
Vds - Drain-Source Breakdown Voltage | 250 V |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C |