RF MOSFET Transistors 300W 50V RF MOS 20dB 175MHz N-Ch
Products specifications
Transistor Polarity | N-Channel |
Packaging | Bulk |
Gain | 20 dB |
Minimum Operating Temperature | - 65 C |
Vds - Drain-Source Breakdown Voltage | 125 V |
Technology | Si |
Product Type | RF MOSFET Transistors |
Output Power | 300 W |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 40 A |