RF MOSFET Transistors RF Power LDMOS transistor HF up to 1.5 GHz
Products specifications
Id - Continuous Drain Current | 9 A |
Maximum Operating Temperature | + 200 C |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 90 V |
Technology | Si |
Product Type | RF MOSFET Transistors |