RF MOSFET Transistors POWER R.F.
Products specifications
Minimum Operating Temperature | - 65 C |
Packaging | Tube |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Gain | 26.8 dB |
Output Power | 350 W |
Product Type | RF MOSFET Transistors |
Vds - Drain-Source Breakdown Voltage | 250 V |
Id - Continuous Drain Current | 20 A |
Transistor Polarity | N-Channel |