PD85035-E

RF MOSFET Transistors POWER R.F. N-Ch Trans

SKU: PD85035-E

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R 834.50

R 769.87

R 657.31

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RF MOSFET Transistors POWER R.F. N-Ch Trans

Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Packaging	Tube
Gain	14.9 dB
Transistor Polarity	N-Channel
Technology	Si
Minimum Operating Temperature	- 65 C
Id - Continuous Drain Current	8 A
Maximum Operating Temperature	+ 165 C
Output Power	35 W
Product Type	RF MOSFET Transistors

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Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Packaging	Tube
Gain	14.9 dB
Transistor Polarity	N-Channel
Technology	Si
Minimum Operating Temperature	- 65 C
Id - Continuous Drain Current	8 A
Maximum Operating Temperature	+ 165 C
Output Power	35 W
Product Type	RF MOSFET Transistors