IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, so
Products specifications
Product | IGBT Silicon Modules |
Pd - Power Dissipation | 208 W |
Configuration | Sixpack |
Collector-Emitter Saturation Voltage | 2.3 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 40 C |
Collector- Emitter Voltage VCEO Max | 650 V |
Gate-Emitter Leakage Current | 500 nA |
Continuous Collector Current at 25 C | 50 A |