IGBT Modules ACEPACK 1 sixpack topology, 1200 V, 25 A, trench gate field-stop IGBT M series,
Products specifications
Gate-Emitter Leakage Current | 500 nA |
Collector-Emitter Saturation Voltage | 1.95 V |
Collector- Emitter Voltage VCEO Max | 1200 V |
Pd - Power Dissipation | 197 W |
Product | IGBT Silicon Modules |
Continuous Collector Current at 25 C | 25 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 40 C |
Configuration | Sixpack |
Technology | Si |