IGBT Modules PM-IGBT-TFS-SBD-SP3F
Products specifications
Configuration | Dual |
Collector-Emitter Saturation Voltage | 2.05 V |
Maximum Operating Temperature | + 100 C |
Pd - Power Dissipation | 250 W |
Gate-Emitter Leakage Current | 120 nA |
Minimum Operating Temperature | - 40 C |
Product | IGBT Silicon Modules |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Continuous Collector Current at 25 C | 75 A |