IGBT Modules PM-IGBT-TFS-SP3
Products specifications
Gate-Emitter Leakage Current | 150 nA |
Maximum Operating Temperature | + 100 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 2.05 V |
Product | IGBT Silicon Modules |
Pd - Power Dissipation | 650 W |
Packaging | Tube |
Minimum Operating Temperature | - 40 C |
Continuous Collector Current at 25 C | 185 A |
Configuration | Dual |