IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Maximum Operating Temperature | + 100 C |
Continuous Collector Current at 25 C | 700 A |
Product | IGBT Silicon Modules |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 600 V |
Gate-Emitter Leakage Current | 800 nA |
Collector-Emitter Saturation Voltage | 1.4 V |
Pd - Power Dissipation | 2.3 kW |
Minimum Operating Temperature | - 40 C |
Configuration | Dual |