IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
Product | IGBT Silicon Modules |
Maximum Operating Temperature | + 100 C |
Collector-Emitter Saturation Voltage | 1.5 V |
Continuous Collector Current at 25 C | 80 A |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 600 V |
Gate-Emitter Leakage Current | 600 nA |
Configuration | Dual |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | 176 W |