IGBT Modules PM-IGBT-TFS-SP4
Products specifications
Packaging | Tube |
Gate-Emitter Leakage Current | 400 nA |
Minimum Operating Temperature | - 40 C |
Product | IGBT Silicon Modules |
Pd - Power Dissipation | 312 W |
Collector- Emitter Voltage VCEO Max | 1.7 kV |
Continuous Collector Current at 25 C | 75 A |
Collector-Emitter Saturation Voltage | 2 V |
Maximum Operating Temperature | + 100 C |
Configuration | Dual |