IGBT Modules PM-IGBT-TFS-SP1
Lead Time: 259 Days
Products specifications
Configuration | Dual |
Minimum Operating Temperature | - 40 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Continuous Collector Current at 25 C | 75 A |
Gate-Emitter Leakage Current | 400 nA |
Collector-Emitter Saturation Voltage | 1.7 V |
Pd - Power Dissipation | 277 W |
Packaging | Tube |
Maximum Operating Temperature | + 100 C |
Product | IGBT Silicon Modules |