IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Minimum Operating Temperature | - 40 C |
Product | IGBT Silicon Modules |
Configuration | Dual |
Gate-Emitter Leakage Current | 600 nA |
Continuous Collector Current at 25 C | 550 A |
Maximum Operating Temperature | + 100 C |
Collector-Emitter Saturation Voltage | 1.4 V |
Packaging | Tube |
Pd - Power Dissipation | 1.75 kW |
Collector- Emitter Voltage VCEO Max | 600 V |