IGBT Modules PM-IGBT-TFS-D4
Products specifications
Pd - Power Dissipation | 2.08 kW |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.7 kV |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 2 V |
Minimum Operating Temperature | - 40 C |
Packaging | Bulk |
Maximum Operating Temperature | + 125 C |
Continuous Collector Current at 25 C | 800 A |
Gate-Emitter Leakage Current | 400 nA |