IGBT Modules PM-IGBT-TFS-D4
Products specifications
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |
Collector-Emitter Saturation Voltage | 1.7 V |
Gate-Emitter Leakage Current | 600 nA |
Pd - Power Dissipation | 1.785 kW |
Continuous Collector Current at 25 C | 650 A |
Packaging | Bulk |
Maximum Operating Temperature | + 125 C |