IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Maximum Operating Temperature | + 100 C |
Continuous Collector Current at 25 C | 500 A |
Gate-Emitter Leakage Current | 1.2 uA |
Pd - Power Dissipation | 1.15 kW |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 1.5 V |
Collector- Emitter Voltage VCEO Max | 650 V |
Packaging | Tube |
Minimum Operating Temperature | - 40 C |