IGBT Modules PM-IGBT-TFS-D3
Products specifications
Minimum Operating Temperature | - 40 C |
Configuration | Dual |
Maximum Operating Temperature | + 125 C |
Gate-Emitter Leakage Current | 400 nA |
Collector- Emitter Voltage VCEO Max | 600 V |
Pd - Power Dissipation | 1.25 kW |
Packaging | Bulk |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 1.5 V |
Continuous Collector Current at 25 C | 500 A |