IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
Maximum Operating Temperature | + 100 C |
Collector-Emitter Saturation Voltage | 1.7 V |
Gate-Emitter Leakage Current | 400 nA |
Pd - Power Dissipation | 208 W |
Minimum Operating Temperature | - 40 C |
Configuration | 3-Phase |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Continuous Collector Current at 25 C | 55 A |
Product | IGBT Silicon Modules |