IGBT Modules PM-IGBT-TFS-SP3
Products specifications
Gate-Emitter Leakage Current | 300 nA |
Packaging | Tube |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 1.5 V |
Configuration | 3-Phase |
Pd - Power Dissipation | 90 W |
Collector- Emitter Voltage VCEO Max | 600 V |
Minimum Operating Temperature | - 40 C |
Continuous Collector Current at 25 C | 50 A |
Maximum Operating Temperature | + 100 C |