IGBT Modules PM-IGBT-TFS-SP3
Products specifications
Pd - Power Dissipation | 210 W |
Configuration | Full Bridge |
Minimum Operating Temperature | - 40 C |
Packaging | Tube |
Maximum Operating Temperature | + 100 C |
Continuous Collector Current at 25 C | 45 A |
Product | IGBT Silicon Modules |
Collector- Emitter Voltage VCEO Max | 1.7 kV |
Gate-Emitter Leakage Current | 600 nA |
Collector-Emitter Saturation Voltage | 2 V |